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S1T8603 Datasheet UNIVERSAL SPEECH NETWORK

Manufacturer: Samsung Semiconductor

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General Description

Pin No 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Symbol VL TXGA1 TXGA2 RXO RXGA MICMIC+ CST GND RXI MF MUTE VCC VST AGC RDC Description Positive power line and TX Amp output TX gain adjustment TX gain adjustment RX output RX gain adjustment Mic(-) input Mic(+) input Current stabilizer Ground RX input DTMF Input Mute ‘High’: DTMF mode, Mute ‘Low’: speech mode Internal power supply pin Voltage stabilizer Automatic gain control DC Resistance control ABSOLUTE MAXIMUM RATINGS Characteristic Line Voltage Line Current Surge Line Current Power Dissipation Operating Temperature Storage Temperature Symbol VL IL IL(SURGE) PD TORP TSTG Value 15 150 200 1.0 − 25 — 75 − 55 — 150 Unit V mA mA W °C °C 3 S1T8603 UNIVERSAL SPEECH NETWORK ELECTRICAL CHARACTERISTICS (Ta = 25

Overview

UNIVERSAL SPEECH NETWORK S1T8603 INTRODUCTION The S1T8603 can fulfill the standards of other countries by changing the external component.

Dynamic or piezoelectric type can be used with receiver.

Each gain is controlled with AGC in accordance with the line current.

Key Features

  • Independent adjustment of DC resistance and AC impedance. ECM or dynamic microphone can be used. DTMF signal interface. Mute function Operates at the low line voltage (1.6V) Low or high impedance receiver type can be used. Low line current operation. (IL = 4mA) 16.
  • SOP.
  • 225.

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